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20 (SCIE) Hyoun Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Investigation into the patterning of a concave-type Pt electrode capacitor using the reactive ion etching method, Microelectronic Engineering 65 (2003.05) 489-497.
19 (SCIE) Kwang-Sik Kim, Hyoun Woo Kim*, Synthesis of ZnO nanorod on bare Si substrate using metal organic chemical vapor deposition, Physica B: Condensed Matter 328 (2003.05) 368-371.
18 (SCIE) Kwang-Sik Kim, Hyoun Woo Kim*, Chong Mu Lee, Effect of growth temperature on ZnO thin film deposited on SiO2 substrate, Materials Science and Engineering: B 98 (2003.03.15) 135-139.
17 (SCIE) Hyoun Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, High-rate Ru electrode etching using O2/Cl2 inductively coupled plasma, Microelectronic Engineering 65 (2003.03) 319-326.
16 (SCIE) Hyoun-Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, Patterning of W/WNx/poly-Si gate electrode using Cl2/O2 plasmas, Microelectronic Engineering 65 (2003.03) 285-292.
15 (SCIE) J. H. Lee, W. J. Choi*, Y. J. Park, I. K. Han, J. I. Lee, J. W. Cho, E. K. Kim, C. M. Lee, H.-W. Kim, Thermal Treatment of InGaAs/GaAs Self-assembled Quantum Dots With SiNx and SiO2 Capping Layers, Journal of the Korean Physical Society 42 (2003.02) S313-S315.
14 (SCIE) Kwang-Sik Kim, Hyoun Woo Kim*, Structural Characterization of ZnO Thin Film Grown on Si-Based Substrates by Metal Organic Chemical Vapor Deposition, Journal of the Korean Physical Society 42 (2003.02) S149-S152.
13 (SCIE) Hyoun-Woo Kim*, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, A study on the Pt electrode etching for 0.15 μm technologies, Microelectronic engineering 65 (2003.01) 185-195.
12 (SCIE) Hyoun Woo Kim*, Jae-Hyun Han, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon, Study of Ru etching using O2/Cl2 helicon plasmas, Materials Science and Engineering: B 95 (2002.09.01) 249-253.
11 (SCIE) Cheol Jin Lee*, Seung Chul Lyu, Hyoun-Woo Kim, Jong Wan Park, Hyun Min Jung, Jaiwook Park, Carbon nanotubes produced by tungsten-based catalyst using vapor phase deposition method, Chem. Phys. Lett. 361 (2002.08.06) 469-472.